The Gallium Nitride power MOSFETS used in the GaNTubeTM power stage, simplifies this challenge through its ability to efficiently switch at much higher slew rates than any silicon based power MOSFET, with almost perfect (book-like) behavior and oscillation free switching. Enhancement Mode Gallium Nitride MOSFET Delivers Impressive Performance A breakthrough in processing gallium nitride (GaN) on a silicon substrate has produced enhancement-mode FETs with high conductivity and hyperfast switching. Its cost structure and fundamental operating mechanism are similar to silicon-only MOSFET alternat.
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The key for the next essential step towards an energy-efficient world lies in the use of new materials, such as wide bandgap semiconductors which allow for greater power efficiency, smaller size, lighter weight, lower overall cost – or all of these together. Infineon Technologies with its unique position of being the only company currently offering silicon (Si), silicon carbide (SiC), insulated-gate bipolar transistor (IGBT) and gallium nitride (GaN) devices, is the customer’s first choice in all segments.