800v Mosfet



  1. Mosfet 800v 8a
  2. 800v Mosfet Application

With the 800V CoolMOS™ P7 series, Infineon sets a benchmark in 800V superjunction technologies and combines best-in-class performance with state-of-the-art ease-of-use. This new product family is a perfect fit for flyback based consumer SMPS applications. In addition, it is also suitable for PFC stages within consumer, as well as solar applications, adapter, audio, lighting, AUX SMPS, industrial SMPS, fully covering the market needs in terms of its price/performance ratio.

800V CoolMOS™ CE is Infineon's high performance device family offering 800V break down voltage. Designed according to the revolutionary superjunction (SJ) principle, it provides all benefits of a fast switching SJ MOSFET while not sacrificing ease-of-use. BUZ80 3.4A 800V N-Channel Power MOSFET is lot of variations for robust device performance and reliable operation High current, high speed.

800v Mosfet

This product family offers up to 0.6% efficiency gain and 2°C to 8°C lower MOSFET temperature compared to its predecessor as well as to competitor parts tested in typical flyback applications. It also enables higher power density designs through lower switching losses and better DPAK R DS(on) products. Overall, it helps customers save bill of material cost and reduce assembly effort. The integrated Zener Diode ESD protection significantly improves ESD robustness, thus reducing ESD related yield loss.

This product family continues to deliver well recognized best-in-class CoolMOS™ quality. In addition, CoolMOS™ P7 offers a new best-in-class RDS(on): in DPAK a RDS(on) of 280mΩ is available, more than 50 percent lower than the nearest 800V MOSFET competitor. This new benchmark enables higher power density designs, BOM savings, as well as lower assembly cost.

STP5NK80ZFP транзистор MOSFET N-CH 800V 5A TO-220 90W
  • Описание
  • Характеристики
STP5NK80ZFP ? MOSFET N-CH 800V 5A TO-220 Manufacturer: STMicroelectronics Product Category: MOSFET RoHS: Details Transistor Polarity: N-Channel Drain-Source Breakdown Voltage: 800 V Gate-Source Breakdown Voltage: +/- 30 V Continuous Drain Current: 4.3 A Drain-Source On Resistance: 2.4 Ohms Configuration: Single Maximum Operating Temperature: + 150 C Mounting Style: Through Hole Package/Case: TO-220FP Packaging: Tube Fall Time: 30 ns Forward Transconductance - Min: 4.25 S Minimum Operating Temperature: - 55 C Power Dissipation: 30 W Rise Time: 25 ns Factory Pack Quantity: 50 Typical Turn-Off Delay Time: 45 ns Спецификация stp5nk80z.pdf
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