Irf4905 Mosfet

The IRF4905PBF is -55V single P channel HEXFET power MOSFET in TO-220AB package. This MOSFET features extremely low on resistance per silicon area, dynamic dv/dt rating, rugged, fast switching and fully avalanche rated as a result, power MOSFET are well know to provide extremely efficiency and reliability which can be used in wide variety of applications. IRF4905 is a P channel MOSFET designed to drive load voltage of upto -55V with the maximum load current of -74A and in pulse mode it can drive load of upto -260A. The saturation voltage or the voltage on which the transistor completely switched ON or connects drain to source is -2V to -4V.

Type Designator: IRF4905

Irf4905 P-channel Mosfet

Type of Transistor: MOSFET

Type of Control Channel: P -Channel

Maximum Power Dissipation (Pd): 150 W

Maximum Drain-Source Voltage |Vds|: 55 V

Maximum Gate-Source Voltage |Vgs|: 10 V

Maximum Drain Current |Id|: 64 A

Maximum Junction Temperature (Tj): 150 °C

Irf4905 Mosfet Equivalent

Total Gate Charge (Qg): 120 nC

Maximum Drain-Source On-State Resistance (Rds): 0.02 Ohm

Package: TO220AB

IRF4905 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

IRF4905 Datasheet (PDF)

0.1. irf4905lpbf irf4905spbf.pdf Size:361K _international_rectifier

PD - 97034IRF4905SPbFIRF4905LPbFFeatures HEXFET Power MOSFET Advanced Process TechnologyD Ultra Low On-ResistanceVDSS = -55V 150C Operating Temperature Fast SwitchingRDS(on) = 20m Repetitive Avalanche Allowed up to TjmaxG Some Parameters Are Differrent fromID = -42AIRF4905SS Lead-FreeDDDescriptionFeatures of this design are a 150C junction oper

0.2. irf4905pbf.pdf Size:181K _international_rectifier

PD - 94816IRF4905PbFHEXFET Power MOSFET Advanced Process Technology Ultra Low On-ResistanceD Dynamic dv/dt RatingVDSS = -55V 175C Operating Temperature Fast SwitchingRDS(on) = 0.02G P-Channel Fully Avalanche RatedID = -74A Lead-Free SDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveextre

0.3. irf4905s.pdf Size:163K _international_rectifier

PD - 9.1478AIRF4905S/LHEXFET Power MOSFET Advanced Process TechnologyD Surface Mount (IRF4905S)VDSS = -55V Low-profile through-hole (IRF4905L) 175C Operating TemperatureRDS(on) = 0.02 Fast SwitchingG P-ChannelID = -74A Fully Avalanche RatedSDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieve

0.4. irf4905.pdf Size:108K _international_rectifier

PD - 9.1280CIRF4905HEXFET Power MOSFET Advanced Process TechnologyD Ultra Low On-ResistanceVDSS = -55V Dynamic dv/dt Rating 175C Operating TemperatureRDS(on) = 0.02 Fast SwitchingG P-ChannelID = -74A Fully Avalanche RatedSDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveextremely low on-

0.5. irf4905.pdf Size:241K _inchange_semiconductor

isc P-Channel MOSFET Transistor IRF4905,IIRF4905FEATURESStatic drain-source on-resistance:RDS(on)0.02Enhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONCombine with the fast switching speed and ruggedized devicedesign,provide the designer with an extremely efficient andreliab

Datasheet: IRF3710S, IRF430, IRF440, IRF450, IRF451, IRF452, IRF453, IRF460, 2N5485, IRF4905L, IRF4905S, IRF510, IRF510A, IRF510S, IRF511, IRF512, IRF513.

Irf4905 Mosfet Wiring

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Transistor Mosfet Irf4905